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AN99203 - S25FL129P PROGRAMMING GUIDE | Cypress Semiconductor

AN99203 - S25FL129P PROGRAMMING GUIDE

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2021년 8월 17일
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This is an Obsolete Application Note
The document AN99203 - S25FL129P PROGRAMMING GUIDE has been marked as obsolete. The obsolete version of this application note is still available with the below description but may not be complete or valid any longer. If you have any questions or require support in regards to the below application note content, please click here and create a technical support case.
Every flash device supports three fundamental operations: Read, Erase, and Program. The Read operation enables access to digital data contents of the flash memory array. The Erase operation converts bits from '0' (programmed) to '1' (erased) and are performed on a sector basis. The Programming operation sets a bit or group of bits from '1' (erased) to '0' (programmed). The S25FL (032/064/129) P Flash Family offers both Single and Multi I/O read and write access modes which provides access bandwidths (BW) up to 40 Mbytes/s. The S25FL129P supports standard Page Programming and Quad Page Programming operations. This document investigates the S25FL-P standard Page Programming and Quad Programming performance and highlights recommended programming practices and verification methods.