AN42468 - On-Die Termination for QDR(R) II+/DDR II+ SRAMs | Cypress Semiconductor
AN42468 - On-Die Termination for QDR(R) II+/DDR II+ SRAMs
AN42468 discusses on-die termination (ODT) scheme, implementation, advantages and power calculation for the QDRII+ and DDRII+ family of Synchronous SRAMs on the 65-nm technology devices.
ODT has the following advantages:
- Improves signal integrity by having termination closer to the device inputs
- Simplifies board routing
- Saves board space by eliminating external resistors
- Reduces cost involved in using external termination resistors
For ODT-enabled QDRII+ and DDRII+ SRAMs, ODT is offered on the following input signals:
- Input clocks (K and Kb clocks)
- Data input signals
- Control signals (Byte Write Select signals)
The figure below shows the ODT implementation for Cypress QDRII+/DDRII+ SRAMs:
아래 링크를 클릭하면 원하는 주파수, 총 전력 소비량, 동기 SRAM의 접합부 온도 등에 대한 Idd 전류 계산에 사용되는 도구를 확인할 수 있습니다.
https://www.cypress.com/?docID=23984
공식에 사용된 Vdd 전압과 Idd 전류를 확인하려면 해당 제품 데이터시트를 참조하십시오.
Dear valued customer,
Thank you for choosing our products. They come with all the know-how and passion that our engineers have put into it. As you probably already know, Cypress is now Infineon. This is a major step for our company, but also for the good of you.
Reliability and business continuity are of utmost importance for us. Hence, we remain fully committed to honoring existing customer and distributor relationships. This includes offering the legacy Cypress product portfolio. We thank you very much for your trusting support.
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관련 파일
파일 제목 | 언어 | Size | 최신 업데이트 |
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영어 | 239.87 KB | 2020/05/26 |
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중국어 | 395.23 KB | 2015/11/23 |
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일본어 | 415.03 KB | 2015/11/23 |
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