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AN42468 - On-Die Termination for QDR(R) II+/DDR II+ SRAMs | Cypress Semiconductor

AN42468 - On-Die Termination for QDR(R) II+/DDR II+ SRAMs

최신 업데이트: 
2021년 3월 02일
버전: 
*I
AN42468 discusses on-die termination (ODT) scheme, implementation, advantages and power calculation for the QDR¿II+ and DDRII+ family of Synchronous SRAMs on the 65-nm technology devices.

AN42468 discusses on-die termination (ODT) scheme, implementation, advantages and power calculation for the QDRII+ and DDRII+ family of Synchronous SRAMs on the 65-nm technology devices.

ODT has the following advantages:

  • Improves signal integrity by having termination closer to the device inputs
  • Simplifies board routing
  • Saves board space by eliminating external resistors
  • Reduces cost involved in using external termination resistors

For ODT-enabled QDRII+ and DDRII+ SRAMs, ODT is offered on the following input signals:

  • Input clocks (K and Kb clocks)
  • Data input signals
  • Control signals (Byte Write Select signals)

The figure below shows the ODT implementation for Cypress QDRII+/DDRII+ SRAMs:

  

아래 링크를 클릭하면 원하는 주파수, 총 전력 소비량, 동기 SRAM의 접합부 온도 등에 대한 Idd 전류 계산에 사용되는 도구를 확인할 수 있습니다.

https://www.cypress.com/?docID=23984

공식에 사용된 Vdd 전압과 Idd 전류를 확인하려면 해당 제품 데이터시트를 참조하십시오.

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