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AN42468 - On-Die Termination for QDR(R) II+/DDR II+ SRAMs | Cypress Semiconductor

AN42468 - On-Die Termination for QDR(R) II+/DDR II+ SRAMs

최신 업데이트: 
2020년 5월 28일
버전: 
*I
AN42468 discusses on-die termination (ODT) scheme, implementation, advantages and power calculation for the QDR¿II+ and DDRII+ family of Synchronous SRAMs on the 65-nm technology devices.

AN42468 discusses on-die termination (ODT) scheme, implementation, advantages and power calculation for the QDRII+ and DDRII+ family of Synchronous SRAMs on the 65-nm technology devices.

ODT has the following advantages:

  • Improves signal integrity by having termination closer to the device inputs
  • Simplifies board routing
  • Saves board space by eliminating external resistors
  • Reduces cost involved in using external termination resistors

For ODT-enabled QDRII+ and DDRII+ SRAMs, ODT is offered on the following input signals:

  • Input clocks (K and Kb clocks)
  • Data input signals
  • Control signals (Byte Write Select signals)

The figure below shows the ODT implementation for Cypress QDRII+/DDRII+ SRAMs:

  

아래 링크를 클릭하면 원하는 주파수, 총 전력 소비량, 동기 SRAM의 접합부 온도 등에 대한 Idd 전류 계산에 사용되는 도구를 확인할 수 있습니다.

https://www.cypress.com/?docID=23984

공식에 사용된 Vdd 전압과 Idd 전류를 확인하려면 해당 제품 데이터시트를 참조하십시오.

번역 문서는 참고용으로만 제공하는 것입니다. 설계 과정에 참여할 경우에는 영어 버전 문서를 참고하는 것이 좋습니다.

관련 파일

파일 제목 언어 Size 최신 업데이트
AN42468 On-Die Termination for QDR(R) II+/DDR II+ SRAMs.pdf 영어 239.87 KB 2020/05/26
AN42468 On-Die Termination for QDR II+/DDR II+ SRAMs (Chinese).pdf 중국어 395.23 KB 2015/11/23
AN42468 On-Die Termination for QDR II+/DDR II+ SRAMs (Japanese).pdf 일본어 415.03 KB 2015/11/23

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