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AN43380 - HSB Operation in nvSRAMs | Cypress Semiconductor

AN43380 - HSB Operation in nvSRAMs

최신 업데이트: 
2018년 1월 24일
버전: 
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개요

Cypress’s nonvolatile synchronous random access memory (nvSRAM) combines the best features of SRAM and EEPROM and makes it the fastest and the most reliable nonvolatile memory. Every bit of the nvSRAM is constituted by integrating a fast SRAM and a SONOS (Silicon-Oxide-Nitride-Oxide-Silicon) nonvolatile memory. The SRAM is read from and written to it an infinite number of times, while independent nonvolatile data resides in the nonvolatile elements.

HSB Operation in nvSRAMs Diagram (AN43380)

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