You are here

CY14B256LA: 256-Kbit (32 K × 8) nvSRAM | Cypress Semiconductor

CY14B256LA: 256-Kbit (32 K × 8) nvSRAM

최신 업데이트: 
2020년 6월 26일
버전: 
*K

256-Kbit (32 K × 8) nvSRAM

특징

  • 25 ns and 45 ns access times
  • Internally organized as 32 K × 8 (CY14B256LA)
  • Hands off automatic STORE on power-down with only a small capacitor
  • STORE to QuantumTrap nonvolatile elements initiated by software, device pin, or AutoStore on power-down
  • RECALL to SRAM initiated by software or power-up
  • Infinite read, write, and recall cycles
  • 1 million STORE cycles to QuantumTrap
  • 20-year data retention
  • Single 3 V plus symbol icon20% to –10% operation
  • Industrial temperature
  • 44-pin thin small outline package (TSOP) II, 48-pin shrunk small outline package (SSOP), and 32-pin small-outline integrated circuit (SOIC) packages
  • Pb-free and restriction of hazardous substances (RoHS) compliance

기능 설명

The Cypress CY14B256LA is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 32 K bytes of 8 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the world’s most reliable nonvolatile memory. The SRAM provides infinite read and write cycles, while independent nonvolatile data resides in the highly reliable QuantumTrap cell. Data transfers from the SRAM to the nonvolatile elements (the  STORE operation) takes place automatically at power-down. On  power-up, data is restored to the SRAM (the RECALL operation)  from the nonvolatile memory. Both the STORE and RECALL  operations are also available under software control.  

번역 문서는 참고용으로만 제공하는 것입니다. 설계 과정에 참여할 경우에는 영어 버전 문서를 참고하는 것이 좋습니다.