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CY15B104Q: 4-Mbit (512 K × 8) Serial (SPI) F-RAM Datasheet | Cypress Semiconductor

CY15B104Q: 4-Mbit (512 K × 8) Serial (SPI) F-RAM Datasheet

최신 업데이트: 
2020년 7월 13일
버전: 
*E

4-Mbit (512 K × 8) Serial (SPI) F-RAM

특징

  • 4-Mbit ferroelectric random access memory (F-RAM) logically organized as 512 K × 8
    • High-endurance 100 trillion (1014) read/writes
    • 151-year data retention (See the Data Retention and Endurance table)
    • NoDelay™ writes
    • Advanced high-reliability ferroelectric process
  • Very fast serial peripheral interface (SPI)
    • Up to 40-MHz frequency
    • Direct hardware replacement for serial flash and EEPROM
    • Supports SPI mode 0 (0, 0) and mode 3 (1, 1)
  • For more, see pdf.

기능 설명

The CY15B104Q is a 4-Mbit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes similar to a RAM. It provides reliable data retention for 151 years while eliminating the complexities, overhead, and system-level reliability problems caused by serial flash, EEPROM, and other nonvolatile memories.

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