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CY15B104QSN/CY15V104QSN, EXCELON™-ULTRA 4-MBIT (512K X 8) QUAD SPI F-RAM (Preliminary) | Cypress Semiconductor

CY15B104QSN/CY15V104QSN, EXCELON™-ULTRA 4-MBIT (512K X 8) QUAD SPI F-RAM (Preliminary)

최신 업데이트: 
2020년 6월 02일

The CY15x104QSN is a 4-Mbit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes similar to a RAM. It provides reliable data retention for 151 years while eliminating the complexities, overhead, and system-level reliability problems caused by serial flash and other nonvolatile memories.

  • 4-Mbit ferroelectric random access memory (F-RAM) logically organized as 512K * 8
    • Virtually unlimited endurance of 100 trillion (1014) read/write cycles
    • 151-year data retention (See Data Retention and Endurance on page 77)
    • NoDelay™ writes
    • Advanced high-reliability ferroelectric process
  • Single and multi I/O serial peripheral interface (SPI)
    • Supports SPI mode 0 (0, 0) and mode 3 (1, 1)
    • Serial bus interface SPI protocols
    • Extended I/O SPI protocols
    • Dual SPI (DPI) protocols
    • Quad SPI (QPI) protocols
  • SPI clock frequency
    • Up to 108-MHz frequency SPI Single Data Rate (SDR)
    • Up to 54-MHz frequency SPI Double Data Rate (DDR)
  • Execute-in-place (XIP)
    • Write protection, data security, and data integrity
    • Hardware protection using the Write Protect (WP) pin
    • Software block protection
  • Embedded error correction code (ECC) and cyclic redundancy check (CRC) for enhanced data integrity
    • ECC detects and corrects 1-bit error. In case 2-bit error occurs, it doesn’t correct but reports through ECC Status register
    • CRC detects any accidental change to raw data
  • Extended electronic signatures
    • Device ID includes manufacturer ID and product ID
    • Unique ID
    • User writable Serial Number
  • Dedicated 256-byte special sector F-RAM
    • Dedicated special sector write and read
    • Content can survive up to three standard reflow cycles
  • Low-power consumption at high speed
    • 5 mA (typ) active current for 108 MHz SPI SDR
    • 13 mA (typ) active current for 108 MHz QSPI SDR and 54 MHz QSPI DDR
    • 158 μA (typ) standby current
    • 0.75 μA (typ) deep power down mode current
    • 0.1 μA (typ) hibernate mode current
  • Low-voltage operation:
    • CY15V104QSN: VDD = 1.71 V to 1.89 V
    • CY15B104QSN: VDD = 1.8 V to 3.6 V
  • Operating temperature: -40 ℃ to +85 ℃
  • Packages
    • 8-pin Small Outline Integrated Circuit (SOIC) package
    • 8-pin Grid-Array Quad Flat No-Lead (GQFN) package
  • Restriction of hazardous substances (RoHS) compliant
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