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CY62136EV30 MoBL®: 2-Mbit (128 K × 16) Static RAM | Cypress Semiconductor

CY62136EV30 MoBL®: 2-Mbit (128 K × 16) Static RAM

최신 업데이트: 
2020년 6월 09일
버전: 
*J

2-Mbit (128K x 16) Static RAM

특징

  • Very high speed: 45 ns
  • Wide voltage range: 2.20V to 3.60V
  • Pin compatible with CY62136CV30
  • Ultra low standby power
    • Typical standby current: 1μA
    • Maximum standby current: 7μA
  • Ultra-low active power
    • Typical active current: 2 mA at f = 1 MHz
  • Easy memory expansion with CE, and OE features
  • 자세한 사항은 pdf를 참조하십시오



기능 설명

The CY62136EV30 is a high performance CMOS static RAM organized as 128K words by 16 bits. This device features advanced circuit design to provide ultra low active current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellular telephones. The device also has an automatic power down feature that significantly reduces power consumption when addresses are not toggling.