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CY62137FV18 MoBL®: 2-Mbit (128 K × 16) Static RAM | Cypress Semiconductor

CY62137FV18 MoBL®: 2-Mbit (128 K × 16) Static RAM

최신 업데이트: 
2017년 12월 03일

2-Mbit (128K x 16) Static RAM


  • Very high speed: 55 ns
  • Wide voltage range: 1.65 V to 2.25 V
  • Pin compatible with CY62137CV18
  • Ultra low standby power
    • Typical standby current: 1 μA
    • Maximum standby current: 5 μA
  • Ultra low active power
    • Typical active current: 1.6 mA @ f = 1 MHz
  • 자세한 사항은 pdf를 참조하십시오

기능 설명

The CY62137FV18 is a high performance CMOS static RAM organized as 128K words by 16 bits. This device features advanced circuit design to provide ultra low active current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellular telephones. The device also has an automatic power down feature that significantly reduces power consumption when addresses are not toggling.