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CY62157ESL MOBL(R), 8-MBIT (512K X 16) STATIC RAM | Cypress Semiconductor

CY62157ESL MOBL(R), 8-MBIT (512K X 16) STATIC RAM

최신 업데이트: 
2020년 5월 28일
버전: 
*J

8-Mbit (512K x 16) Static RAM

특징

  • Very high speed: 45 ns
  • Wide voltage range: 2.2 V to 3.6 V and 4.5 V to 5.5 V
  • Ultra low standby power
    • Typical Standby current: 2 μA
    • Maximum Standby current: 8 μA
  • Ultra low active power
    • Typical active current: 1.8 mA at f = 1 MHz
  • Easy memory expansion with CE and OE features
  • Automatic power down when deselected
  • Complementary metal oxide semiconductor (CMOS) for optimum speed and power
  • Available in Pb-free 44-pin thin small outline package (TSOP) II package

기능 설명

The CY62157ESL is a high performance CMOS static RAM organized as 512K words by 16 bits. This device features advanced circuit design to provide ultra low active current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications. The device also has an automatic power down feature that significantly reduces power consumption when addresses are not toggling. Place the device into standby mode when deselected (CE HIGH or both BHE and BLE are HIGH).

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