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CY62158E MoBL®: 8-Mbit (1 M × 8) Static RAM | Cypress Semiconductor

CY62158E MoBL®: 8-Mbit (1 M × 8) Static RAM

최신 업데이트: 
2020년 6월 26일
버전: 
*L

8-Mbit (1M x 8) Static RAM

특징

  • Very high speed: 45 ns
    • Wide voltage range: 4.5 V – 5.5 V
  • Ultra low active power
    • Typical active current:1.8 mA at f = 1 MHz
    • Typical active current: 18 mA at f = fmax
  • Ultra low standby power
    • Typical standby current: 2 μA
    • Maximum standby current: 8 μA
  • Easy memory expansion with CE1, CE2 and OE features
  • Automatic power down when deselected
  • CMOS for optimum speed and power
  • Offered in Pb-free 44-Pin TSOP II package

기능 설명

The CY62158E MoBL® is a high performance CMOS static RAM organized as 1024K words by 8 bits. This device features advanced circuit design to provide ultra low active current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications. The device also has an automatic power down feature that significantly reduces power consumption.

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