CY62187EV30 MoBL®: 64-Mbit (4M x 16) Static RAM | Cypress Semiconductor
CY62187EV30 MoBL®: 64-Mbit (4M x 16) Static RAM
최신 업데이트:
2019년 12월 11일
버전:
*N
64-Mbit (4M x 16) Static RAM
특징
- Very High Speed
- 55 ns
- Wide Voltage Range
- 2.2V to 3.6V
- Ultra Low Standby Power
- Typical Standby Current: 8 μA
- Maximum Standby Current: 48 μA
- Ultra Low Active Power
- Typical Active Current: 15 mA at f = 1 MHz
- Easy Memory Expansion with CE1, CE2, and OE Features
- Automatic Power Down when Deselected
- CMOS for Optimum Speed and Power
- Available in Pb-Free 48-Ball FBGA Package
기능 설명
The CY62187EV30 is a high performance CMOS static RAM organized as 4 M words by 16-bits. This device features advanced circuit design to provide ultra low active current. It is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellular telephones. The device also has an automatic power down feature that significantly reduces power consumption by 99 percent when addresses are not toggling.
관련 파일
| 파일 제목 | 언어 | Size | 최신 업데이트 |
|---|---|---|---|
 CY62187EV30 MoBL®: 64-Mbit (4M x 16) Static RAM.pdf |
영어 | 277.27 KB | 2019/12/11 |
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