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CY7C1353G: 4-Mbit (256 K × 18) Flow-Through SRAM with NoBL™ Architecture | Cypress Semiconductor

CY7C1353G: 4-Mbit (256 K × 18) Flow-Through SRAM with NoBL™ Architecture

최신 업데이트: 
2020년 6월 09일
버전: 
*R

4-Mbit (256 K × 18) Flow-Through SRAM with NoBL™ Architecture

특징

  • Supports up to 100-MHz bus operations with zero wait states
    • Data is transferred on every clock
  • Pin compatible and functionally equivalent to ZBT™ devices
  • Internally self timed output buffer control to eliminate the need to use OE
  • Registered inputs for flow-through operation
  • Byte write capability
  • 256 K × 18 common I/O architecture
  • 2.5 V / 3.3 V I/O power supply (VDDQ)
  • Fast clock-to-output times
  • 자세한 사항은 pdf를 참조하십시오
     

기능 설명

The CY7C1353G is a 3.3 V, 256 K × 18 synchronous flow-through burst SRAM designed specifically to support unlimited true back-to-back read/write operations without the insertion of wait states. The CY7C1353G is equipped with the advanced No Bus Latency™ (NoBL™) logic required to enable consecutive read/write operations with data being transferred on every clock cycle. This feature dramatically improves the throughput of data through the SRAM, especially in systems that require frequent write-read transitions.

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