You are here

CY7C4121KV13, CY7C4141KV13: 144-Mbit QDR™-IV HP SRAM | Cypress Semiconductor

CY7C4121KV13, CY7C4141KV13: 144-Mbit QDR™-IV HP SRAM

최신 업데이트: 
2017년 8월 15일

144-Mbit QDR™-IV HP SRAM


  • 144-Mbit density (8 M × 18, 4 M × 36)
  • Total Random Transaction Rate of 1334 MT/s
  • Maximum operating frequency of 667 MHz
  • Read latency of 5.0 clock cycles and write latency of 3.0 clock cycles
  • Two-word burst on all accesses
  • Dual independent bidirectional data ports
  • Single address port used to control both data ports
  • Single data rate (SDR) control signaling
  • 자세한 사항은 pdf를 참조하십시오

기능 설명

The QDR-IV HP (High-Performance) SRAM is a high-performance memory device that has been optimized to maximize the number of random transactions per second by the use of two independent bidirectional data ports.

번역 문서는 참고용으로만 제공하는 것입니다. 설계 과정에 참여할 경우에는 영어 버전 문서를 참고하는 것이 좋습니다.