You are here

CY7C4122KV13, CY7C4142KV13: 144-Mbit QDR™-IV XP SRAM | Cypress Semiconductor

CY7C4122KV13, CY7C4142KV13: 144-Mbit QDR™-IV XP SRAM

최신 업데이트: 
2017년 5월 3일

144-Mbit QDR™-IV XP SRAM


  • 144-Mbit density (8 M × 18, 4 M × 36)
  • Total Random Transaction Rate of 2132 MT/s
  • Maximum operating frequency of 1066 MHz
  • Read latency of 8.0 clock cycles and write latency of 5.0 clock cycles
  • Eight-bank architecture enables one access per bank per cycle
  • Two-word burst on all accesses
  • Dual independent bidirectional data ports
  • Single address port used to control both data ports
  • Single data rate (SDR) control signaling
  • 자세한 사항은 pdf를 참조하십시오


기능 설명

The QDR-IV XP (Xtreme Performance) SRAM is a high-performance memory device optimized to maximize the number of random transactions per second by the use of two independent bidirectional data ports.


번역 문서는 참고용으로만 제공하는 것입니다. 설계 과정에 참여할 경우에는 영어 버전 문서를 참고하는 것이 좋습니다.