CY7C4122KV13, CY7C4142KV13: 144-Mbit QDR-IV XP SRAM | Cypress Semiconductor
CY7C4122KV13, CY7C4142KV13: 144-Mbit QDR-IV XP SRAM
144-Mbit QDR™-IV XP SRAM
- 144-Mbit density (8 M × 18, 4 M × 36)
- Total Random Transaction Rate of 2132 MT/s
- Maximum operating frequency of 1066 MHz
- Read latency of 8.0 clock cycles and write latency of 5.0 clock cycles
- Eight-bank architecture enables one access per bank per cycle
- Two-word burst on all accesses
- Dual independent bidirectional data ports
- Single address port used to control both data ports
- Single data rate (SDR) control signaling
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The QDR-IV XP (Xtreme Performance) SRAM is a high-performance memory device optimized to maximize the number of random transactions per second by the use of two independent bidirectional data ports.
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