FM23MLD16, 8-MBIT (512KX16) F-RAM MEMORY | Cypress Semiconductor
FM23MLD16, 8-MBIT (512KX16) F-RAM MEMORY
8Mbit Ferroelectric Nonvolatile RAM
- Organized as 512Kx16
- Configurable as 1Mx8 Using /UB, /LB
- High Endurance 100 Trillion (1014) Read/Writes
- NoDelay™ Writes
- Page Mode Operation to 33MHz
- Advanced High-Reliability Ferroelectric Process
- For more, see pdf.
The FM23MLD16 is a 512Kx16 nonvolatile memory that reads and writes like a standard SRAM. A ferroelectric random access memory or F-RAM is nonvolatile, which means that data is retained after power is removed. It provides data retention for over 10 years while eliminating the reliability concerns, functional disadvantages, and system design complexities of battery-backed SRAM (BBSRAM). Fast write timing and very high write endurance make F-RAM superior to other types of memory.
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Thank you for choosing our products. They come with all the know-how and passion that our engineers have put into it. As you probably already know, Cypress is now Infineon. This is a major step for our company, but also for the good of you.
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