FM25V02A, 256-Kbit (32K × 8) Serial (SPI) F-RAM with Extended Temperature

256-Kbit (32K × 8) Serial (SPI) F-RAM with Extended Temperature

특징

• 256-Kbit ferroelectric random access memory (F-RAM) logically organized as 32K × 8
  
  • High-endurance 100 trillion (10¹⁴) read/writes
  • 121-year data retention
  • NoDelay™ writes
  • Advanced high-reliability ferroelectric process
• Very fast serial peripheral interface (SPI)
  
  • Up to 33-MHz frequency
  • Direct hardware replacement for serial flash and EEPROM
  • Supports SPI mode 0 (0, 0) and mode 3 (1, 1)
• Sophisticated write-protection scheme
  
  • Hardware protection using the Write Protect (WP) pin
  • Software protection using Write Disable instruction
  • Software block protection for 1/4, 1/2, or entire array
• Device ID
  
  • Manufacturer ID and Product ID
• 적은 전력 소비
  
  • 5-mA active current at 33 MHz
  • 500-μA standby current
  • 12-μA sleep mode current
• Low-voltage operation: VDD = 2.7 V to 3.6 V
• Extended temperature: –40 °C to +105 °C
• 8-pin thin dual flat no leads (DFN) package
• Restriction of hazardous substances (RoHS) compliant
• For more, see pdf.

기능 개요

The FM25V02A is a 256-Kbit nonvolatile memory employing an advanced ferroelectric process. An F-RAM is nonvolatile and performs reads and writes similar to a RAM. It provides reliable data retention for 121 years while eliminating the complexities, overhead, and system-level reliability problems caused by serial flash, EEPROM, and other nonvolatile memories.