64Mb to 256Mb FL-L NOR Flash Memory

64Mb to 256Mb FL-L NOR Flash Memory | Cypress Semiconductor

Quad SPI FL_L NOR Flash Chip

Highest Reliability and Enhanced Security

Cypress FL-L Serial Flash Memory enables the high-performance embedded systems to store critical data by providing the highest reliability, enhanced security and 67Mbps read bandwidth even at an extended temperature range of 40°C to +125°C.

Densities of 256Mb (in production), 128Mb (in production), and 64Mb (in production)
AEC-Q100 qualification and PPAP support are available for automotive customers
Temperature Ranges: Industrial (-40°C to +85°C), Industrial-plus (-40°C to +105°C), Automotive Grade 3 (-40°C to +85°C), Automotive Grade 2 (-40°C to +105°C), Automotive Grade 1 (-40°C to +125°C)
Deep-Power-Down Feature
Uniform 4KB Sector Architecture
Read speed in Single, Dual and Quad I/O modes up to 133 MHz SDR (single data rate), and up to 66 MHz DDR (double data rate) delivering read bandwidth of up to 67 MBps.
Fast Programming performance of 854 KBps to speed manufacturing throughput

부품 번호	Product Status	Density	Access Time	패키징	Temperature Range
S25FL064L	Production	64 Mbit	108 MHz / 54 MHz DDR	8-pin SOIC (208 mil) USON (4x4 mm) 24-ball BGA (6x8 mm, 5x5 ball) 24-ball BGA (6x8 mm, 4x6 ball)	Industrial, -40°C to +85°C Industrial Plus, -40°C to +105°C Automotive Grade 3, -40°C to +85°C Automotive Grade 2, -40°C to +105°C Automotive Grade 1, -40°C to +125°C
S25FL128L	Production	128 Mbit	133 MHz / 66 MHz DDR	8-pin SOIC (208 mil) WSON (5x6 mm) 24-ball BGA (6x8 mm, 5x5 ball) 24-ball BGA (6x8 mm, 4x6 ball)	Industrial, -40°C to +85°C Industrial Plus, -40°C to +105°C Automotive Grade 3, -40°C to +85°C Automotive Grade 2, -40°C to +105°C Automotive Grade 1, -40°C to +125°C
S25FL256L	Production	256 Mbit	133 MHz / 66 MHz DDR	16-pin SOIC (300 mil) WSON (6x8 mm) 24-ball BGA (6x8 mm, 5x5 ball) 24-ball BGA (6x8 mm, 4x6 ball)	Industrial, -40°C to +85°C Industrial Plus, -40°C to +105°C Automotive Grade 3, -40°C to +85°C Automotive Grade 2, -40°C to +105°C Automotive Grade 1, -40°C to +125°C

Parameter	64Mb	128Mb	256Mb
Technology Node	65nm	65nm	65nm
아키텍처	Floating Gate	Floating Gate	Floating Gate
Bus Width	x1, x2, x4	x1, x2, x4	x1, x2, x4
Supply Voltage	2.7 V - 3.6 V	2.7 V - 3.6 V	2.7 V - 3.6 V
Normal Read Speed	6MB/s (50MHz)	6MB/s (50MHz)	6MB/s (50MHz)
Fast Read Speed	13MB/s (108MHz)	16.5MB/s (133MHz)	16.5MB/s (133MHz)
Dual Read Speed	26MB/s (108MHz)	33MB/s (133MHz)	33MB/s (133MHz)
Quad Read Speed	52MB/s (108MHz)	66MB/s (133MHz)	66MB/s (133MHz)
Quad Read Speed (DDR)	54MB/s (54MHz)	66MB/s (66MHz)	66MB/s (66MHz)
Program Buffer Size	256B	256B	256B
Erase Sector/Block Size	4KB / 32KB / 64KB	4KB / 32KB / 64KB	4KB / 32KB / 64KB
Sector / Block Erase Rate (typ.)	61 KB/s (4KB) 106 KB/s (32KB) 142KB/s (64KB)	80 KB/s (4KB) 168 KB/s (32KB) 237KB/s (64KB)	80 KB/s (4KB) 168 KB/s (32KB) 237KB/s (64KB)
Page Programming Rate (typ.)	569 KB/s (256B)	854KB/s (256B)	854KB/s (256B)
Security Region / OTP	1024B	1024B	1024B
Individual and Region Protection or Advanced Sector Protection	예	예	예
Erase Suspend/Resume	예	예	예
Program Suspend/Resume	예	예	예
Operating Temperature	–40°C to +85°C –40°C to +105°C –40°C to +125°C	–40°C to +85°C –40°C to +105°C –40°C to +125°C	–40°C to +85°C –40°C to +105°C –40°C to +125°C