F-RAM (Nonvolatile Ferroelectric RAM)

F-RAM (Nonvolatile Ferroelectric RAM) | Cypress Semiconductor

New Update: Learn about the new Excelon™ F-RAM family

Cypress F-RAM (Ferroelectric RAM) combines nonvolatile data storage with the high performance of RAM.

F-RAM provides fast writes at full interface speed. F-RAM does not have any write delays and data is instantly nonvolatile. Traditional nonvolatile memories have delays of 5 or more milliseconds before data becomes nonvolatile. If power is disrupted, pending data is lost unless the system has extra capacitance or batteries to keep the system on until data is stored.

F-RAM offers virtually unlimited endurance of 100 trillion read/write cycles. Traditional nonvolatile memories typically have less than 1 million cycle endurance, forcing system designers to use complex wear-leveling routines and up to 4x more density to prolong the lifetime of these memories.

F-RAM consumes as low as 300 µA active and 6 µA standby current. Because of fast write speeds, F-RAM stays active for short periods of time, yielding very low energy consumption. Traditional nonvolatile memories with write delays must stay active for longer periods of time, resulting in higher energy consumption.

Serial F-RAM offers a pin-to-pin and footprint compatible EEPROM replacement.

Cypress F-RAM Key Features

4Kb to 4Mb densities
Serial QSPI, DSPI, SPI and I²C interface options
Parallel interface options
Low power, instant data capture on power loss
100-trillion read/write cycle endurance
No batteries required to store data on power loss; RoHS compliant
Radiation and magnetic field tolerant
Processor Companions with integrated analog and digital functions

F-RAM Technology

Cypress F-RAM is built on Ferroelectric technology. The F-RAM chip contains a thin ferroelectric film of lead zirconate titanate, commonly referred to as PZT. The atoms in the PZT change polarity in an electric field, thereby producing a power efficient binary switch. However, the most important aspect of the PZT is that it is not affected by power disruption, making F-RAM a reliable nonvolatile memory. A common misconception is that ferroelectric crystals are ferromagnetic or have similar magnetic properties. In fact, ferroelectric materials switch in an electric field and are not affected by magnetic fields.

Serial and Parallel F-RAM Memories

Cypress’s serial and parallel F-RAM products are the industry’s most energy-efficient and highest-reliability nonvolatile RAM solutions. They are ideal for systems that require the nonvolatile data retention of a ROM and the high speed and high endurance of a RAM. They provide 100 trillion cycle endurance, exceeding the 1 million write cycle limitation of EEPROM and eliminating the need for wear leveling to support a product over its lifespan. Cypress's F-RAM products are ideal for mission-critical applications such as smart meters, automotive electronics, industrial control and automation equipment, multifunction printers and portable medical devices.

F-RAM Features

Attribute	Serial F-RAM Features	Parallel F-RAM Features
제품 선택기 안내	Select Parts	Select Parts
Density	4Kb - 4Mb	64Kb - 4Mb
인터페이스	QSPI/QPI DSPI/DPI SPI I²C	x 8 x 16
Organization	8Kb x 8 32Kb x 8 0.5Kb x 8 2Kb x 8 256Kb x 8 128Kb x 8 16Kb x 8 512Kb x 8 64Kb x 8	32Kb x 8 128Kb x 16 64Kb x 16 256Kb x 16 128Kb x 8 1Mb x 16 8Kb x 8
Max Frequency	Up to 108 MHz (QSPI/QPI) Up to 108 MHz (DSPI/DPI) Up to 108 MHz (SPI) Up to 3.4 MHz (I²C)	-
Voltage Range	1.71 – 1.89 V 1.8 – 3.6 V 2.0 – 3.6 V 2.7 – 3.65 V 2.7 – 5.5 V 4.5 – 5.5 V	2.0 – 3.6 V 2.7 – 3.6 V 2.7 – 5.5 V 4.5 – 5.5 V
Temperature Range	-40˚C to +85˚C -40˚C to +105˚C -40˚C to +125˚C	-40˚C to +85˚C
패키지	8 SOIC 8 TDFN	28 SOIC 44 TSOP II 48 FBGA
AECQ-100	Grade 1 Grade 3	Grade 1 Grade 3

CY15FRAMKIT-001: Cypress' Serial F-RAM™ Development Kit (Arduino™-Compatible):

CY15FRAMKIT-001 is an easy-to-use and inexpensive F-RAM development kit for Cypress’ high‑performance, high-reliability and energy-efficient serial F-RAM devices.

Price: $9.99

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CY15FRAMKIT-001: Cypress's Serial F-RAM™ Development Kit (Arduino™-Compatible)

F-RAM Applications

Smart E-Meters

Automotive Infotainment Systems

Multi-Function Printers

Wearable Electronics

Vehicle Traveling Data Recorders (VTDR)

지원

Developer Community(CDC)

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Smart E-Meter Design Challenges	The Cypress F-RAM Solution
Capture real-time data instantly on power loss	Cypress F-RAM captures data instantly with no 5ms of Soak Time required by competing solutions
Ensure sufficient write-cycle endurance to log data over a 20-year product lifespan	Cypress F-RAM provides endurance for 100 trillion write cycles to log data every millisecond for more than 3,000 years
Minimize system energy usage	Uses 200 times less energy than EEPROM and 3,000 times less energy than NOR Flash

Automotive Infotainment Design Challenges	The Cypress F-RAM Solution
Capture real-time data instantly on power loss	Cypress F-RAM captures data instantly with no 5ms of Soak Time required by competing solutions
Ensure sufficient write-cycle endurance to log data over a 20-year product lifespan	Provides endurance for 100 trillion write cycles to log data every millisecond for more than 3,000 years
Design with AEC-Q100-qualified components	Provides AEC-Q100-qualified memory components

Multi-Function Printer Design Challenges	The Cypress F-RAM Solution
Capture real-time data instantly on power loss	Cypress F-RAM captures data instantly with no 5ms of Soak Time required by competing solutions
Write configuration and usage data at speeds of up to 40 MHz	Cypress F-RAM provides write speed of up to 40 MHz
Ensure sufficient write-cycle endurance to log data over a 10-year product lifespan	Cypress F-RAM provides endurance for 100 trillion write cycles to log data every millisecond for more than 3,000 years

Wearable Electronic Design Challenges	The Cypress F-RAM Solution
Minimize system energy usage	Uses 200 times less energy than EEPROM and 3,000 times less energy than NOR Flash
Ensure sufficient write-cycle endurance to log data every millisecond over a two-year system lifetime	Provides endurance for 100 trillion write cycles to log data every millisecond for more than 3,000 years
Eliminate multiple dice for ROM and RAM requirements	Offers ROM and RAM functionality in one die

VTDR Design Challenges	The Cypress F-RAM Solution
Capture real-time data instantly on power loss	Captures data instantly with no Soak Time requirement
Ensure sufficient write-cycle endurance to log data over a 20-year product lifespan	Provides endurance for 100 trillion write cycles to log data every 10 µs for 30 years
Design with AEC-Q100-qualified memory components	Provides AEC-Q100-qualified memory components

F-RAM (Nonvolatile Ferroelectric RAM) | Cypress Semiconductor