F-RAM Memory (Nonvolatile Ferroelectric RAM)

F-RAM Memory (Nonvolatile Ferroelectric RAM) | Cypress Semiconductor

Trusted Global Leadership for Instant Data Capture with F-RAM

Excelon FRAM (FeRAM)

Cypress Semiconductor offers a comprehensive portfolio of serial and parallel F-RAM (ferroelectric RAM) non-volatile memories to instantly capture and preserve critical data when power is interrupted. In mission-critical data-logging applications like a high-performance Programmable Logic Controller (PLC) on the factory floor requiring high reliability control and throughput, or a life-enhancing patient monitoring device implanted in the human body designing in a low-power, small footprint memory, Cypress’ F-RAMs offer instant non-volatility and virtually unlimited endurance without compromising on speed or energy-efficiency.

Excelon™ F-RAM – High Performance. High Reliability. Ultra-Low Power

Excelon™, Cypress’s next-generation F-RAM delivers the industry’s lowest-power mission-critical nonvolatile memory, by combining ultra-low-power operation with high-speed interfaces, instant nonvolatility and unlimited read/write cycle endurance. This makes Excelon™ the ideal data-logging memory for portable medical, wearable, IoT sensor, industrial and automotive applications.

Excelon™ offers up to 70x reduction in typical standby current compared to standard F-RAMs and a low-pin-count 108 MHz Quad SPI interface that is as fast as a parallel interface with 35ns burst access time. Excelon™ F-RAM supports 1.71V to 1.89V operating voltage range in addition to the wide-voltage 1.8V to 3.6V range and is now available in a small footprint 10mm² 8-pin GQFN package.

FRAM (FeRAM) features and performance diagram

F-RAM Technology and Benefits

Cypress F-RAM is built on Ferroelectric technology. The F-RAM chip contains a thin ferroelectric film of lead zirconate titanate, commonly referred to as PZT. The atoms in the PZT change polarity in an electric field, thereby producing a power efficient binary switch. However, the most important aspect of the PZT is that it is not affected by power disruption, making F-RAM a reliable nonvolatile memory. The underlying operation principle of the F-RAM and its unique memory cell architecture imparts specific advantages that sets the technology apart from competing memory technologies like EEPROM or Flash.

For more details on how the F-RAM technology functions, read this whitepaper.

NoDelay Write

Write data to memory cells at bus speed with no soak-time

High Endurance

Outlast floating gate memories with over 100 trillion (10¹⁴) write cycles

Energy Efficient

Consume 200x less energy than EEPROMs and 3,000x less energy than NOR Flash

Radiation Tolerant

Immune to soft errors caused by radiation that can produce bit flips in memories

Learn about Infineon Products

Watch the Introduction to Cypress’ F-RAM technology
Read:
- Whitepaper: F-RAM Technology Brief
- Whitepaper: Data-Logging Memory Challenges in the 21^st Century
Learn more about the F-RAM product offering
Explore system design challenges and solution considerations
Download the datasheets:
Access all F-RAM application notes here:
Request an F-RAM Development Kit
Use the Product Selector to select the F-RAM that meets your requirements
Order your sample here
Get your schematics reviewed by the Cypress Applications Engineering Team using Cypress Developer Community

Excelon^™ Ultra F-RAM

Low pin-count, High-performance

Density:

2Mbit – 16Mbit

Organization:

Frequency:

Up to 108 MHz

Interface:

QSPI (SDR / DDR)

Voltage:

1.8V – 3.6V

1.71V – 1.89V

Temperature:

-40˚C to +85˚C

제품 선택기

Download Brochure

Excelon^™ LP F-RAM

Ultra-low-power

Density:

2Mbit – 16Mbit

Organization:

Frequency:

Up to 50 MHz

Interface:

SPI

Voltage:

1.8V – 3.6V

1.71V – 1.89V

Temperature:

0˚C to +70˚C

-40˚C to +85˚C

-40˚C to +105˚C

Other:

In-rush current

control at start-up

제품 선택기

Download Brochure

Excelon^™ Auto F-RAM

AEC-Q100 qualified

Density:

2Mbit – 16Mbit

Organization:

Frequency:

50 MHz, 108 MHz

Interface:

SPI, QSPI

Voltage:

1.8V – 3.6V

1.71V – 1.89V

Temperature:

-40˚C to +85˚C

-40˚C to +105˚C

-40˚C to +125˚C

제품 선택기

Download Brochure

Standard Serial SPI F-RAM

Low pin-count SPI

Density:

4Kbit – 4Mbit

Organization:

Frequency:

Up to 40 MHz

Voltage:

2.0V – 3.6V

2.7V – 3.65V

2.7V – 5.5V

4.5V – 5.5V

Temperature:

-40˚C to +85˚C

-40˚C to +105˚C

-40˚C to +125˚C

제품 선택기

Standard Serial I²C F-RAM

Low pin-count I²C

Density:

4Kbit – 1Mbit

Organization:

Frequency:

Up to 3.4 MHz

Voltage:

2.0V – 3.6V

2.7V – 3.65V

2.7V – 5.5V

4.5V – 5.5V

Temperature:

-40˚C to +85˚C

-40˚C to +105˚C

-40˚C to +125˚C

제품 선택기

Standard Parallel F-RAM

High-performance

Density:

64Kbit – 4Mbit

Organization:

x8, x16

Access Speed:

55ns – 70ns

Voltage:

2.0V – 3.6V

2.7V – 3.6V

2.7V – 5.5V

4.5V – 5.5V

Temperature:

-40˚C to +85˚C

제품 선택기

F-RAM Applications

Portable and Implantable Medical Devices

Wearable Fitness Tracker

Programmable Logic Controller (PLC)

ADAS Vision System

Smart e-Meters

Cypress F-RAM Development Kits

CY15FRAMKIT-001

Cypress' Serial F-RAM™ Development Kit (Arduino™-Compatible)

CY15FRAMKIT-001 is an easy-to-use and inexpensive F-RAM development kit for Cypress’ high-performance, high-reliability and energy-efficient serial F-RAM devices.

Buy $9.99

CY15FRAMKIT-002

Excelon™ Ultra Development Kit (Arduino™-Compatible)

CY15FRAMKIT-002 is an easy-to-use and inexpensive F-RAM development kit for evaluating Cypress’ new high-performance Excelon™ Ultra QSPI F-RAM.

Buy $9.99

CY8CKIT-062-WiFi-Bluetooth

PSoC® 6 WiFi-Bluetooth Pioneer Kit with Excelon™ Ultra F-RAM™

The PSoC 6 WiFi-Bluetooth Pioneer Kit is a low-cost hardware platform that enables design and debug of the PSoC 62 MCU and the Murata LBEE5KL1DX Module.

Buy $99.00

Third Party F-RAM Kits

MikroE EXCELON LP CLICK

with 8Mbit ExcelonTM LP F-RAM™

Excelon LP Click is a plug-and-play solution featuring an 8Mbit serial F-RAM (CY15B108QI) that enables customers to evaluate the write speeds, high endurance and data storage capabilities using a mikroBUS^™ socket.

자세히

MikroE FRAM 2 CLICK

with 4Mbit SPI F-RAM™

FRAM 2 Click is a plug-and-play solution featuring an 4Mbit serial F-RAM device (CY15B104Q) that enables customers to evaluate the write speeds, high endurance and data storage capabilities using a mikroBUS^™ socket.

자세히

Software and Tools

Vendor	OS	소프트웨어	Download
Cypress	-	AmbiqMicro - SPI FRAM Driver
Cypress	-	Cypress PSoC - Serial FRAM Code Examples
Cypress	Linux	Linux Driver Support for QSPI F-RAM
Cypress	-	NXPLPC18_43_Excelon_QSPI FRAM Driver
Cypress	-	Renesas S7G2 - FRAM QSPI Driver Module
Cypress	-	STM32 - QSPI Excelon F-RAM Driver
Cypress	-	CY15FRAMKIT-001 Serial F-RAM™ Development Kit Example Project (SPI/I2C)
Cypress	-	CY15FRAMKIT-002 F-RAM Development Kit Example Project (SPI/QSPI)
Cypress	Linux	F-RAM Support under Linux – KBA223028

지원

Developer Community(CDC)

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Design Challenges	The Cypress F-RAM Solution
Minimize system energy usage	Uses 200 times less energy than EEPROM and 3,000 times less energy than NOR Flash
Ensure sufficient write-cycle endurance to log data over a 10-year product lifespan	Provides endurance for 1,000 trillion write cycles to log data every millisecond for more than 3,000 years
Accommodate sufficient memory density within a small form factor	Available up to 8Mbit density in a 10mm2 footprint 8-GQFN package

Design Challenges	The Cypress F-RAM Solution
Maximize battery life of the fitness tracker	Uses 200 times less energy than EEPROM and 3,000 times less energy than NOR Flash
Ensure sufficient nonvolatile memory density and write-cycle endurance, to log data continuously over the lifetime of the device	Provides endurance for 1,000 trillion write cycles to log data every millisecond for more than 3,000 years
Accommodate smallest footprint components to deliver the smallest form-factor device	Available up to 8Mbit density in a 10mm2 footprint 8-GQFN package

Design Challenges	The Cypress F-RAM Solution
Write real-time data, through a low-pin-count (LPC) interface, as fast as a parallel interface with 35 ns burst access time.	Offers low-pin-count (LPC) 108-MHz QSPI interface.
Capture data instantly and reliably on power loss.	Offers NoDelay writes to instantly and reliably capture data on power loss, and retains data for 100 years.
Ensure sufficient nonvolatile memory write-cycle endurance to log data continuously for 15-20 years at 85°C.	Provides endurance of 100-trillion write cycles at 85°C.
Eliminate the use of batteries for power back-up to reduce cost, avoid regular maintenance, increase reliability and comply with RoHS.	Eliminates the need for back-up batteries.

Design Challenges	The Cypress F-RAM Solution
Capture real-time data (sensor data, last image frame, extracted image objects) instantly on power loss, without additional components for power back-up.	Offers NoDelay writes to instantly capture data with no soak time requirement and without additional components for power back-up.
Requires nonvolatile memory densities greater than 1Mbit.	Available from 2Mbit up-to 16Mbit density.
Ensure sufficient nonvolatile memory write-cycle endurance to log data for 15-20 years.	Provides endurance of 10-trillion write cycles to log data every 100 microseconds, for 20 years.
Design with AEC-Q100-qualified and Functional Safety compliant memory components.	AEC-Q100-qualified and Functional Safety (ISO 26262) compliant memory component.

Design Challenges	The Cypress F-RAM Solution
Capture real-time data instantly on power loss	Captures data instantly with no soak time (up to 5ms) required by competing solutions
Ensure sufficient write-cycle endurance, to log data continuously over a 20-year product lifespan	Provides endurance for 100 trillion write cycles to log data every millisecond for more than 3,000 years
Minimize system energy usage	Uses 200 times less energy than EEPROM and 3,000 times less energy than NOR Flash